Compare Infineon Technologies – IPB038N12N3GATMA1 vs Infineon Technologies – IRF8010PBF Specifications

IPB038N12N3GATMA1 IRF8010PBF
Model Number
IPB038N12N3GATMA1 IRF8010PBF
Model Name
Infineon Technologies IPB038N12N3GATMA1 Infineon Technologies IRF8010PBF
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS 100V 80A 15mΩ@10V,45A 260W 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
2.500 grams / 0.088185 oz 2.861 grams / 0.100919 oz
Package / Case
TO-263-3 ITO-220AB-3
Package / Arrange
Tape & Reel (TR) Tube-packed
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
120V 100V
Continuous Drain Current (Id)
120A 80A
Power Dissipation (Pd)
300W 260W
Drain Source On Resistance (RDS(on)@Vgs,Id)
3.8mΩ@100A,10V 15mΩ@10V,45A
Gate Threshold Voltage (Vgs(th)@Id)
4V@270uA 4V@250uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
13.8nF@60V 3.83nF@25V
Total Gate Charge (Qg@Vgs)
211nC@10V 120nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

Compare Infineon Technologies - IPB038N12N3GATMA1 With Other 200 Models

Scroll to Top