Model Number |
IPB050N10NF2SATMA1 |
BSC0925ND |
Model Name |
Infineon Technologies IPB050N10NF2SATMA1 |
Infineon Technologies BSC0925ND |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
100V 103A 5.05mΩ@60A,10V 150W 3.8V@85uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
30V 15A 2.5W 5mΩ@10V,20A 2V@250uA 2 N-Channel TISON-8-EP(6x5) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263-3 |
TISON-8-EP(6x5) |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
100V |
30V |
Continuous Drain Current (Id) |
103A |
15A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
5.05mΩ@60A,10V |
5mΩ@10V,20A |
Power Dissipation (Pd) |
150W |
2.5W |
Gate Threshold Voltage (Vgs(th)@Id) |
3.8V@85uA |
2V@250uA |
Type |
1PCSNChannel |
2 N-Channel |
Input Capacitance (Ciss@Vds) |
3.6nF@50V |
N/A |
Total Gate Charge (Qg@Vgs) |
76nC@10V |
N/A |
Operating Temperature |
-55℃~+175℃@(Tj) |
N/A |