Model Number |
IPB050N10NF2SATMA1 |
BSF134N10NJ3 G |
Model Name |
Infineon Technologies IPB050N10NF2SATMA1 |
Infineon Technologies BSF134N10NJ3 G |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
100V 103A 5.05mΩ@60A,10V 150W 3.8V@85uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
100V 13.4mΩ@30A,10V 3.5V@40uA 1PCSNChannel MG-DSON-2(3.8x4.8)mm MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263-3 |
MG-DSON-2(3.8x4.8)mm |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
100V |
Continuous Drain Current (Id) |
103A |
9A;40A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
5.05mΩ@60A,10V |
13.4mΩ@30A,10V |
Power Dissipation (Pd) |
150W |
2.2W;43W |
Gate Threshold Voltage (Vgs(th)@Id) |
3.8V@85uA |
3.5V@40uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
3.6nF@50V |
2.3nF@50V |
Total Gate Charge (Qg@Vgs) |
76nC@10V |
30nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-40℃~+150℃@(Tj) |