| Model Number |
| IPB050N10NF2SATMA1 |
BSO203P H |
| Model Name |
| Infineon Technologies IPB050N10NF2SATMA1 |
Infineon Technologies BSO203P H |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 100V 103A 5.05mΩ@60A,10V 150W 3.8V@85uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
20V 7A 1.6W 21mΩ@4.5V,8.2A 1.2V@50uA 2 P-Channel SOIC-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-263-3 |
SOIC-8 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 100V |
20V |
| Continuous Drain Current (Id) |
| 103A |
7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 5.05mΩ@60A,10V |
21mΩ@4.5V,8.2A |
| Power Dissipation (Pd) |
| 150W |
1.6W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3.8V@85uA |
1.2V@50uA |
| Type |
| 1PCSNChannel |
2 P-Channel |
| Input Capacitance (Ciss@Vds) |
| 3.6nF@50V |
3.75nF@15V |
| Total Gate Charge (Qg@Vgs) |
| 76nC@10V |
[email protected] |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |
