Compare Infineon Technologies – IPB050N10NF2SATMA1 vs Infineon Technologies – BSO612CV G Specifications

IPB050N10NF2SATMA1 BSO612CV G
Model Number
IPB050N10NF2SATMA1 BSO612CV G
Model Name
Infineon Technologies IPB050N10NF2SATMA1 Infineon Technologies BSO612CV G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
100V 103A 5.05mΩ@60A,10V 150W 3.8V@85uA 1PCSNChannel TO-263-3 MOSFETs ROHS 60V 2W 1PCSNChannel+1PCSPChannel SOIC-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-263-3 SOIC-8
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
100V 60V
Continuous Drain Current (Id)
103A 3A;2A
Drain Source On Resistance (RDS(on)@Vgs,Id)
5.05mΩ@60A,10V 120mΩ@3A,10V;300mΩ@2A,10V
Power Dissipation (Pd)
150W 2W
Gate Threshold Voltage (Vgs(th)@Id)
3.8V@85uA 4V@20uA;4V@450uA
Type
1PCSNChannel 1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)
3.6nF@50V 340pF;400pF@25V
Total Gate Charge (Qg@Vgs)
76nC@10V 15.5nC@10V;16nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+150℃@(Tj)

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