Compare Infineon Technologies – IPB050N10NF2SATMA1 vs Infineon Technologies – BSO613SPV G Specifications

IPB050N10NF2SATMA1 BSO613SPV G
Model Number
IPB050N10NF2SATMA1 BSO613SPV G
Model Name
Infineon Technologies IPB050N10NF2SATMA1 Infineon Technologies BSO613SPV G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
100V 103A 5.05mΩ@60A,10V 150W 3.8V@85uA 1PCSNChannel TO-263-3 MOSFETs ROHS 60V 3.44A 110mΩ@10V,3.44A 2.5W 3V@1mA 1PCSPChannel SOP-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-263-3 SOP-8
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
100V 60V
Continuous Drain Current (Id)
103A 3.44A
Drain Source On Resistance (RDS(on)@Vgs,Id)
5.05mΩ@60A,10V 110mΩ@10V,3.44A
Power Dissipation (Pd)
150W 2.5W
Gate Threshold Voltage (Vgs(th)@Id)
3.8V@85uA 3V@1mA
Type
1PCSNChannel 1PCSPChannel
Input Capacitance (Ciss@Vds)
3.6nF@50V 700pF@25V
Total Gate Charge (Qg@Vgs)
76nC@10V 20nC@0~10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+150℃@(Tj)

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