Model Number |
IPB050N10NF2SATMA1 |
BSS83P H6327 |
Model Name |
Infineon Technologies IPB050N10NF2SATMA1 |
Infineon Technologies BSS83P H6327 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
100V 103A 5.05mΩ@60A,10V 150W 3.8V@85uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
60V 330mA 2Ω@10V,330mA 360mW 2V@80uA P Channel PG-SOT-23-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263-3 |
PG-SOT-23-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
100V |
60V |
Continuous Drain Current (Id) |
103A |
330mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
5.05mΩ@60A,10V |
2Ω@10V,330mA |
Power Dissipation (Pd) |
150W |
360mW |
Gate Threshold Voltage (Vgs(th)@Id) |
3.8V@85uA |
2V@80uA |
Type |
1PCSNChannel |
P Channel |
Input Capacitance (Ciss@Vds) |
3.6nF@50V |
N/A |
Total Gate Charge (Qg@Vgs) |
76nC@10V |
N/A |
Operating Temperature |
-55℃~+175℃@(Tj) |
N/A |