Model Number |
IPB180N04S4LH0ATMA1 |
BSC082N10LSGATMA1 |
Model Name |
Infineon Technologies IPB180N04S4LH0ATMA1 |
Infineon Technologies BSC082N10LSGATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS |
100V 8.2mΩ@100A,10V 156W 2.4V@110uA 1PCSNChannel TDSON-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.160 grams / 0.005644 oz |
Package / Case |
TO-263-7-3 |
TDSON-8 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
40V |
100V |
Continuous Drain Current (Id) |
180A |
13.8A;100A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
1mΩ@100A,10V |
8.2mΩ@100A,10V |
Power Dissipation (Pd) |
250W |
156W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.2V@180uA |
2.4V@110uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
24.44nF@25V |
7.4nF@50V |
Total Gate Charge (Qg@Vgs) |
310nC@10V |
104nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |