| Model Number |
| IPB180N04S4LH0ATMA1 |
BSD235N H6327 |
| Model Name |
| Infineon Technologies IPB180N04S4LH0ATMA1 |
Infineon Technologies BSD235N H6327 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS |
SOT-363-6 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-263-7-3 |
SOT-363-6 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
- |
| Drain Source Voltage (Vdss) |
| 40V |
- |
| Continuous Drain Current (Id) |
| 180A |
- |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 1mΩ@100A,10V |
- |
| Power Dissipation (Pd) |
| 250W |
- |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2.2V@180uA |
- |
| Type |
| 1PCSNChannel |
- |
| Input Capacitance (Ciss@Vds) |
| 24.44nF@25V |
- |
| Total Gate Charge (Qg@Vgs) |
| 310nC@10V |
- |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
N/A |
