Compare Infineon Technologies – IPB180N04S4LH0ATMA1 vs Infineon Technologies – BSD316SN H6327 Specifications

IPB180N04S4LH0ATMA1 BSD316SN H6327
Model Number
IPB180N04S4LH0ATMA1 BSD316SN H6327
Model Name
Infineon Technologies IPB180N04S4LH0ATMA1 Infineon Technologies BSD316SN H6327
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS 30V 1.4A 500mW 160mΩ@10V,1.4A [email protected] 1PCSNChannel SOT-363-6 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.035 grams / 0.001235 oz
Package / Case
TO-263-7-3 SOT-363-6
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
40V 30V
Continuous Drain Current (Id)
180A 1.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)
1mΩ@100A,10V 160mΩ@10V,1.4A
Power Dissipation (Pd)
250W 500mW
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@180uA [email protected]
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
24.44nF@25V N/A
Total Gate Charge (Qg@Vgs)
310nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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