Compare Infineon Technologies – IPB180N04S4LH0ATMA1 vs Infineon Technologies – BSZ084N08NS5 Specifications

IPB180N04S4LH0ATMA1 BSZ084N08NS5
Model Number
IPB180N04S4LH0ATMA1 BSZ084N08NS5
Model Name
Infineon Technologies IPB180N04S4LH0ATMA1 Infineon Technologies BSZ084N08NS5
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS 80V 64A 7.1mΩ@10V,20A 63W 3V@31uA 1PCSNChannel TSDSON-8-EP(3.3x3.3) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.068 grams / 0.002399 oz
Package / Case
TO-263-7-3 TSDSON-8-EP(3.3x3.3)
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
40V 80V
Continuous Drain Current (Id)
180A 64A
Drain Source On Resistance (RDS(on)@Vgs,Id)
1mΩ@100A,10V 7.1mΩ@10V,20A
Power Dissipation (Pd)
250W 63W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@180uA 3V@31uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
24.44nF@25V 1.4nF@40V
Total Gate Charge (Qg@Vgs)
310nC@10V 20nC@0~10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+150℃@(Tj)

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