Compare Infineon Technologies – IPB180N04S4LH0ATMA1 vs Infineon Technologies – BSZ0901NSI Specifications

IPB180N04S4LH0ATMA1 BSZ0901NSI
Model Number
IPB180N04S4LH0ATMA1 BSZ0901NSI
Model Name
Infineon Technologies IPB180N04S4LH0ATMA1 Infineon Technologies BSZ0901NSI
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS 30V 142A 1.8mΩ@10V,20A 69W 2V@250uA 1PCSNChannel TSDSON-8-EP(3.3x3.3) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-263-7-3 TSDSON-8-EP(3.3x3.3)
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
40V 30V
Continuous Drain Current (Id)
180A 142A
Drain Source On Resistance (RDS(on)@Vgs,Id)
1mΩ@100A,10V 1.8mΩ@10V,20A
Power Dissipation (Pd)
250W 69W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@180uA 2V@250uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
24.44nF@25V 2.6nF@15V
Total Gate Charge (Qg@Vgs)
310nC@10V 20nC@0~4.5V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+150℃@(Tj)

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