Compare Infineon Technologies – IPB180N04S4LH0ATMA1 vs Infineon Technologies – BSZ130N03MS G Specifications

IPB180N04S4LH0ATMA1 BSZ130N03MS G
Model Number
IPB180N04S4LH0ATMA1 BSZ130N03MS G
Model Name
Infineon Technologies IPB180N04S4LH0ATMA1 Infineon Technologies BSZ130N03MS G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS 30V 9A 2.1W 11.5mΩ@10V,20A 2V@250uA 1PCSNChannel TSDSON-8(3.3x3.3) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.100 grams / 0.003527 oz
Package / Case
TO-263-7-3 TSDSON-8(3.3x3.3)
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
40V 30V
Continuous Drain Current (Id)
180A 9A
Drain Source On Resistance (RDS(on)@Vgs,Id)
1mΩ@100A,10V 11.5mΩ@10V,20A
Power Dissipation (Pd)
250W 2.1W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@180uA 2V@250uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
24.44nF@25V N/A
Total Gate Charge (Qg@Vgs)
310nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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