Compare Infineon Technologies – IPB180N04S4LH0ATMA1 vs Infineon Technologies – IPD640N06LGBTMA1 Specifications

IPB180N04S4LH0ATMA1 IPD640N06LGBTMA1
Model Number
IPB180N04S4LH0ATMA1 IPD640N06LGBTMA1
Model Name
Infineon Technologies IPB180N04S4LH0ATMA1 Infineon Technologies IPD640N06LGBTMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS 60V 18A 64mΩ@18A,10V 47W 2V@16uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-263-7-3 TO-252-3
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
40V 60V
Continuous Drain Current (Id)
180A 18A
Drain Source On Resistance (RDS(on)@Vgs,Id)
1mΩ@100A,10V 64mΩ@18A,10V
Power Dissipation (Pd)
250W 47W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@180uA 2V@16uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
24.44nF@25V 470pF@30V
Total Gate Charge (Qg@Vgs)
310nC@10V 13nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

Compare Infineon Technologies - IPB180N04S4LH0ATMA1 With Other 200 Models

Scroll to Top