Compare Infineon Technologies – IPB180N04S4LH0ATMA1 vs Infineon Technologies – IPD65R225C7 Specifications

IPB180N04S4LH0ATMA1 IPD65R225C7
Model Number
IPB180N04S4LH0ATMA1 IPD65R225C7
Model Name
Infineon Technologies IPB180N04S4LH0ATMA1 Infineon Technologies IPD65R225C7
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS 650V 11A 225mΩ@10V,4.8A 63W 4V@240uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.410 grams / 0.014462 oz
Package / Case
TO-263-7-3 TO-252-3
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
40V 650V
Continuous Drain Current (Id)
180A 11A
Drain Source On Resistance (RDS(on)@Vgs,Id)
1mΩ@100A,10V 225mΩ@10V,4.8A
Power Dissipation (Pd)
250W 63W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@180uA 4V@240uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
24.44nF@25V N/A
Total Gate Charge (Qg@Vgs)
310nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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