Compare Infineon Technologies – IPB180N04S4LH0ATMA1 vs Infineon Technologies – IPG20N04S408AATMA1 Specifications

IPB180N04S4LH0ATMA1 IPG20N04S408AATMA1
Model Number
IPB180N04S4LH0ATMA1 IPG20N04S408AATMA1
Model Name
Infineon Technologies IPB180N04S4LH0ATMA1 Infineon Technologies IPG20N04S408AATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS 40V 20A 65W 7.6mΩ@17A,10V 4V@30uA 2 N-Channel TDSON-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-263-7-3 TDSON-8
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
40V 40V
Continuous Drain Current (Id)
180A 20A
Drain Source On Resistance (RDS(on)@Vgs,Id)
1mΩ@100A,10V 7.6mΩ@17A,10V
Power Dissipation (Pd)
250W 65W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@180uA 4V@30uA
Type
1PCSNChannel 2 N-Channel
Input Capacitance (Ciss@Vds)
24.44nF@25V 2.94nF@25V
Total Gate Charge (Qg@Vgs)
310nC@10V 36nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

Compare Infineon Technologies - IPB180N04S4LH0ATMA1 With Other 200 Models

Scroll to Top