Compare Infineon Technologies – IPB180N04S4LH0ATMA1 vs Infineon Technologies – IPP048N04N G Specifications

IPB180N04S4LH0ATMA1 IPP048N04N G
Model Number
IPB180N04S4LH0ATMA1 IPP048N04N G
Model Name
Infineon Technologies IPB180N04S4LH0ATMA1 Infineon Technologies IPP048N04N G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS 40V 70A 4mΩ@10V,70A 79W 4V@200uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 3.007 grams / 0.106069 oz
Package / Case
TO-263-7-3 TO-220-3
Package / Arrange
Tape & Reel (TR) Tube-packed
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
40V 40V
Continuous Drain Current (Id)
180A 70A
Drain Source On Resistance (RDS(on)@Vgs,Id)
1mΩ@100A,10V 4mΩ@10V,70A
Power Dissipation (Pd)
250W 79W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@180uA 4V@200uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
24.44nF@25V 2.5nF@20V
Total Gate Charge (Qg@Vgs)
310nC@10V 31nC@0~10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

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