Model Number |
IPB180N04S4LH0ATMA1 |
IPS80R600P7AKMA1 |
Model Name |
Infineon Technologies IPB180N04S4LH0ATMA1 |
Infineon Technologies IPS80R600P7AKMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS |
800V 8A 60W 600mΩ@3.4A,10V 3.5V@170uA 1PCSNChannel TO-251-3-342 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263-7-3 |
TO-251-3-342 |
Package / Arrange |
Tape & Reel (TR) |
Tube-packed |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
40V |
800V |
Continuous Drain Current (Id) |
180A |
8A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
1mΩ@100A,10V |
600mΩ@3.4A,10V |
Power Dissipation (Pd) |
250W |
60W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.2V@180uA |
3.5V@170uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
24.44nF@25V |
570pF@500V |
Total Gate Charge (Qg@Vgs) |
310nC@10V |
20nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |