Compare Infineon Technologies – IPB180N04S4LH0ATMA1 vs Infineon Technologies – IPTG014N10NM5ATMA1 Specifications

IPB180N04S4LH0ATMA1 IPTG014N10NM5ATMA1
Model Number
IPB180N04S4LH0ATMA1 IPTG014N10NM5ATMA1
Model Name
Infineon Technologies IPB180N04S4LH0ATMA1 Infineon Technologies IPTG014N10NM5ATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS 100V 1.4mΩ@150A,10V 3.8V@280uA 1PCSNChannel HSOG-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.710 grams / 0.060319 oz
Package / Case
TO-263-7-3 HSOG-8
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
40V 100V
Continuous Drain Current (Id)
180A 37A;366A
Drain Source On Resistance (RDS(on)@Vgs,Id)
1mΩ@100A,10V 1.4mΩ@150A,10V
Power Dissipation (Pd)
250W 3.8W;375W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@180uA 3.8V@280uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
24.44nF@25V 16nF@50V
Total Gate Charge (Qg@Vgs)
310nC@10V 211nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

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