Model Number |
IPB180N04S4LH0ATMA1 |
IQE008N03LM5ATMA1 |
Model Name |
Infineon Technologies IPB180N04S4LH0ATMA1 |
Infineon Technologies IQE008N03LM5ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS |
30V 0.85mΩ@20A,10V 2V@250uA 1PCSNChannel TSON-8-EP(3.3x3.3) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.600 grams / 0.021164 oz |
Package / Case |
TO-263-7-3 |
TSON-8-EP(3.3x3.3) |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
40V |
30V |
Continuous Drain Current (Id) |
180A |
27A;253A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
1mΩ@100A,10V |
0.85mΩ@20A,10V |
Power Dissipation (Pd) |
250W |
2.1W;89W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.2V@180uA |
2V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
24.44nF@25V |
5.7nF@15V |
Total Gate Charge (Qg@Vgs) |
310nC@10V |
64nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |