Compare Infineon Technologies – IPB180N04S4LH0ATMA1 vs Infineon Technologies – SPD30P06P G Specifications

IPB180N04S4LH0ATMA1 SPD30P06P G
Model Number
IPB180N04S4LH0ATMA1 SPD30P06P G
Model Name
Infineon Technologies IPB180N04S4LH0ATMA1 Infineon Technologies SPD30P06P G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS 60V 30A 69mΩ@10V,21.5A 125W [email protected] 1PCSPChannel TO-252-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-263-7-3 TO-252-3
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
40V 60V
Continuous Drain Current (Id)
180A 30A
Drain Source On Resistance (RDS(on)@Vgs,Id)
1mΩ@100A,10V 69mΩ@10V,21.5A
Power Dissipation (Pd)
250W 125W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@180uA [email protected]
Type
1PCSNChannel 1PCSPChannel
Input Capacitance (Ciss@Vds)
24.44nF@25V 1.228nF@25V
Total Gate Charge (Qg@Vgs)
310nC@10V 32nC@0~10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

Compare Infineon Technologies - IPB180N04S4LH0ATMA1 With Other 200 Models

Scroll to Top