Compare Infineon Technologies – IPB180N04S4LH0ATMA1 vs Infineon Technologies – SPI07N65C3IN Specifications

IPB180N04S4LH0ATMA1 SPI07N65C3IN
Model Number
IPB180N04S4LH0ATMA1 SPI07N65C3IN
Model Name
Infineon Technologies IPB180N04S4LH0ATMA1 Infineon Technologies SPI07N65C3IN
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS 650V 7.3A 83W 600mΩ@4.6A,10V 3.9V@350uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-263-7-3 TO-262-3
Package / Arrange
Tape & Reel (TR) Bag-packed
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
40V 650V
Continuous Drain Current (Id)
180A 7.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)
1mΩ@100A,10V 600mΩ@4.6A,10V
Power Dissipation (Pd)
250W 83W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@180uA 3.9V@350uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
24.44nF@25V 790pF@25V
Total Gate Charge (Qg@Vgs)
310nC@10V 27nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+150℃@(Tj)

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