Model Number |
IPB230N06L3G |
BSZ036NE2LSATMA1 |
Model Name |
Infineon Technologies IPB230N06L3G |
Infineon Technologies BSZ036NE2LSATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
60V 30A 36W 23mΩ@30A,10V 2.2V@11uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
25V 3.6mΩ@20A,10V 2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263-3 |
TSDSON-8 |
Package / Arrange |
Bag-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
60V |
25V |
Continuous Drain Current (Id) |
30A |
16A;40A |
Power Dissipation (Pd) |
36W |
2.1W;37W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
23mΩ@30A,10V |
3.6mΩ@20A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
2.2V@11uA |
2V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
1.6nF@30V |
1.2nF@12V |
Total Gate Charge (Qg@Vgs) |
[email protected] |
16nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |