| Model Number |
| IPB230N06L3G |
IPA50R190CEXKSA2 |
| Model Name |
| Infineon Technologies IPB230N06L3G |
Infineon Technologies IPA50R190CEXKSA2 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 60V 30A 36W 23mΩ@30A,10V 2.2V@11uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
500V 18.5A 190mΩ@6.2A,13V 32W 3.5V@510uA 1PCSNChannel TO-220-FP MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-263-3 |
TO-220-FP |
| Package / Arrange |
| Bag-packed |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 60V |
500V |
| Continuous Drain Current (Id) |
| 30A |
18.5A |
| Power Dissipation (Pd) |
| 36W |
32W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 23mΩ@30A,10V |
190mΩ@6.2A,13V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2.2V@11uA |
3.5V@510uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 1.6nF@30V |
1.137nF@100V |
| Total Gate Charge (Qg@Vgs) |
| [email protected] |
47.2nC@10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-40℃~+150℃@(Tj) |
