Model Number |
IPB60R165CPATMA1 |
BSC014NE2LSIATMA1 |
Model Name |
Infineon Technologies IPB60R165CPATMA1 |
Infineon Technologies BSC014NE2LSIATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
600V 21A 192W 165mΩ@12A,10V 3.5V@790uA 1PCSNChannel TO-263 MOSFETs ROHS |
25V 1.4mΩ@30A,10V 2V@250uA 1PCSNChannel TDSON-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.200 grams / 0.007055 oz |
Package / Case |
TO-263 |
TDSON-8 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
600V |
25V |
Continuous Drain Current (Id) |
21A |
33A;100A |
Power Dissipation (Pd) |
192W |
2.5W;74W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
165mΩ@12A,10V |
1.4mΩ@30A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@790uA |
2V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2nF@100V |
2.7nF@12V |
Total Gate Charge (Qg@Vgs) |
52nC@10V |
39nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |