Compare Infineon Technologies – IPB60R165CPATMA1 vs Infineon Technologies – IPD038N06N3GATMA1 Specifications

IPB60R165CPATMA1 IPD038N06N3GATMA1
Model Number
IPB60R165CPATMA1 IPD038N06N3GATMA1
Model Name
Infineon Technologies IPB60R165CPATMA1 Infineon Technologies IPD038N06N3GATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
600V 21A 192W 165mΩ@12A,10V 3.5V@790uA 1PCSNChannel TO-263 MOSFETs ROHS 60V 90A 188W 3.8mΩ@90A,10V 4V@90uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.350 grams / 0.04762 oz
Package / Case
TO-263 TO-252-3
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
600V 60V
Continuous Drain Current (Id)
21A 90A
Power Dissipation (Pd)
192W 188W
Drain Source On Resistance (RDS(on)@Vgs,Id)
165mΩ@12A,10V 3.8mΩ@90A,10V
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@790uA 4V@90uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
2nF@100V 8nF@30V
Total Gate Charge (Qg@Vgs)
52nC@10V 98nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+175℃@(Tj)

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