Model Number |
IPB60R165CPATMA1 |
IPD50N06S2-14 |
Model Name |
Infineon Technologies IPB60R165CPATMA1 |
Infineon Technologies IPD50N06S2-14 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
600V 21A 192W 165mΩ@12A,10V 3.5V@790uA 1PCSNChannel TO-263 MOSFETs ROHS |
55V 50A 14.4mΩ@32A,10V 136W 4V@80uA 1PCSNChannel TO-252 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263 |
TO-252 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
600V |
55V |
Continuous Drain Current (Id) |
21A |
50A |
Power Dissipation (Pd) |
192W |
136W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
165mΩ@12A,10V |
14.4mΩ@32A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@790uA |
4V@80uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2nF@100V |
1.485nF@25V |
Total Gate Charge (Qg@Vgs) |
52nC@10V |
52nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |