Model Number |
IPB60R165CPATMA1 |
IPD5N25S3430ATMA1 |
Model Name |
Infineon Technologies IPB60R165CPATMA1 |
Infineon Technologies IPD5N25S3430ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
600V 21A 192W 165mΩ@12A,10V 3.5V@790uA 1PCSNChannel TO-263 MOSFETs ROHS |
250V 5A 430mΩ@5A,10V 41W 4V@13uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.390 grams / 0.013757 oz |
Package / Case |
TO-263 |
TO-252-3-313 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
600V |
250V |
Continuous Drain Current (Id) |
21A |
5A |
Power Dissipation (Pd) |
192W |
41W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
165mΩ@12A,10V |
430mΩ@5A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@790uA |
4V@13uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2nF@100V |
422pF@25V |
Total Gate Charge (Qg@Vgs) |
52nC@10V |
6.2nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |