Compare Infineon Technologies – IPB60R165CPATMA1 vs Infineon Technologies – IPD5N25S3430ATMA1 Specifications

IPB60R165CPATMA1 IPD5N25S3430ATMA1
Model Number
IPB60R165CPATMA1 IPD5N25S3430ATMA1
Model Name
Infineon Technologies IPB60R165CPATMA1 Infineon Technologies IPD5N25S3430ATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
600V 21A 192W 165mΩ@12A,10V 3.5V@790uA 1PCSNChannel TO-263 MOSFETs ROHS 250V 5A 430mΩ@5A,10V 41W 4V@13uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.390 grams / 0.013757 oz
Package / Case
TO-263 TO-252-3-313
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
600V 250V
Continuous Drain Current (Id)
21A 5A
Power Dissipation (Pd)
192W 41W
Drain Source On Resistance (RDS(on)@Vgs,Id)
165mΩ@12A,10V 430mΩ@5A,10V
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@790uA 4V@13uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
2nF@100V 422pF@25V
Total Gate Charge (Qg@Vgs)
52nC@10V 6.2nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+175℃@(Tj)

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