| Model Number |
| IPB60R165CPATMA1 |
IPD80P03P4L07ATMA2 |
| Model Name |
| Infineon Technologies IPB60R165CPATMA1 |
Infineon Technologies IPD80P03P4L07ATMA2 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 600V 21A 192W 165mΩ@12A,10V 3.5V@790uA 1PCSNChannel TO-263 MOSFETs ROHS |
30V 80A 6.8mΩ@80A,10V 88W 2V@130uA P Channel TO-252-3-11 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-263 |
TO-252-3-11 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 600V |
30V |
| Continuous Drain Current (Id) |
| 21A |
80A |
| Power Dissipation (Pd) |
| 192W |
88W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 165mΩ@12A,10V |
6.8mΩ@80A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3.5V@790uA |
2V@130uA |
| Type |
| 1PCSNChannel |
P Channel |
| Input Capacitance (Ciss@Vds) |
| 2nF@100V |
5.7nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 52nC@10V |
80nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |
