Model Number |
IPB60R165CPATMA1 |
ISC027N10NM6ATMA1 |
Model Name |
Infineon Technologies IPB60R165CPATMA1 |
Infineon Technologies ISC027N10NM6ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
600V 21A 192W 165mΩ@12A,10V 3.5V@790uA 1PCSNChannel TO-263 MOSFETs ROHS |
100V 2.7mΩ@50A,10V 3.3V@116uA 1PCSNChannel TDSON-8FL MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.350 grams / 0.012346 oz |
Package / Case |
TO-263 |
TDSON-8FL |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
600V |
100V |
Continuous Drain Current (Id) |
21A |
23A;192A |
Power Dissipation (Pd) |
192W |
3W;217W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
165mΩ@12A,10V |
2.7mΩ@50A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@790uA |
3.3V@116uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2nF@100V |
5.5nF@50V |
Total Gate Charge (Qg@Vgs) |
52nC@10V |
72.5nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |