| Model Number |
| IPB65R420CFD |
SPD08P06PGBTMA1 |
| Model Name |
| Infineon Technologies IPB65R420CFD |
Infineon Technologies SPD08P06PGBTMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 650V 8.7A 420mΩ@3.4A,10V 83.3W 4.5V@300uA 1PCSNChannel TO-263 MOSFETs ROHS |
60V 8.83A 300mΩ@10A,6.2V 42W 4V@250uA 1PCSPChannel TO-252-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.367 grams / 0.012946 oz |
| Package / Case |
| TO-263 |
TO-252-3 |
| Package / Arrange |
| Bag-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 650V |
60V |
| Continuous Drain Current (Id) |
| 8.7A |
8.83A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 420mΩ@3.4A,10V |
300mΩ@10A,6.2V |
| Power Dissipation (Pd) |
| 83.3W |
42W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4.5V@300uA |
4V@250uA |
| Type |
| 1PCSNChannel |
1PCSPChannel |
| Input Capacitance (Ciss@Vds) |
| 870pF@100V |
420pF@25V |
| Total Gate Charge (Qg@Vgs) |
| 31.5nC@10V |
13nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |
