| Model Number |
| IPB80N06S2-H5 |
F411MR12W2M1B76BOMA1 |
| Model Name |
| Infineon Technologies IPB80N06S2-H5 |
Infineon Technologies F411MR12W2M1B76BOMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TO-263-3 MOSFETs ROHS |
1.2kV 100A 11.3mΩ@100A,15V 5.55V@40mA 4PCSN-Channel AG-EASY1B-2 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-263-3 |
AG-EASY1B-2 |
| Package / Arrange |
| Tape & Reel (TR) |
Tray |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
1.2kV |
| Continuous Drain Current (Id) |
| - |
100A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
11.3mΩ@100A,15V |
| Power Dissipation (Pd) |
| - |
N/A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
5.55V@40mA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
4PCSN-Channel |
| Input Capacitance (Ciss@Vds) |
| - |
7.36nF@800V |
| Total Gate Charge (Qg@Vgs) |
| - |
248nC@15V |
