| Model Number |
| IPB80N06S2-H5 |
IPT65R105G7XTMA1 |
| Model Name |
| Infineon Technologies IPB80N06S2-H5 |
Infineon Technologies IPT65R105G7XTMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| TO-263-3 MOSFETs ROHS |
650V 24A 105mΩ@8.9A,10V 156W 4V@440uA 1PCSNChannel HSOF-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-263-3 |
HSOF-8 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
650V |
| Continuous Drain Current (Id) |
| - |
24A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
105mΩ@8.9A,10V |
| Power Dissipation (Pd) |
| - |
156W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
4V@440uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
1.67nF@400V |
| Total Gate Charge (Qg@Vgs) |
| - |
35nC@10V |
