| Model Number |
| IPB80N06S4L05ATMA2 |
BSC030N08NS5ATMA1 |
| Model Name |
| Infineon Technologies IPB80N06S4L05ATMA2 |
Infineon Technologies BSC030N08NS5ATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 60V 80A 5.1mΩ@80A,10V 107W 2.2V@60uA 1PCSNChannel TO-263 MOSFETs ROHS |
80V 100A 3mΩ@50A,10V 3.8V@95uA 1PCSNChannel TDSON-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.175 grams / 0.006173 oz |
| Package / Case |
| TO-263 |
TDSON-8 |
| Package / Arrange |
| Bag-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 60V |
80V |
| Continuous Drain Current (Id) |
| 80A |
100A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 5.1mΩ@80A,10V |
3mΩ@50A,10V |
| Power Dissipation (Pd) |
| 107W |
2.5W;139W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2.2V@60uA |
3.8V@95uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 8.18nF@25V |
5.6nF@40V |
| Total Gate Charge (Qg@Vgs) |
| 110nC@10V |
76nC@10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |
