Model Number |
IPB80N06S4L05ATMA2 |
BSS84PWH6327XTSA1 |
Model Name |
Infineon Technologies IPB80N06S4L05ATMA2 |
Infineon Technologies BSS84PWH6327XTSA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
60V 80A 5.1mΩ@80A,10V 107W 2.2V@60uA 1PCSNChannel TO-263 MOSFETs ROHS |
60V 150mA 8Ω@150mA,10V 300mW 2V@20uA 1PCSPChannel SOT-323 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263 |
SOT-323 |
Package / Arrange |
Bag-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
60V |
60V |
Continuous Drain Current (Id) |
80A |
150mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
5.1mΩ@80A,10V |
8Ω@150mA,10V |
Power Dissipation (Pd) |
107W |
300mW |
Gate Threshold Voltage (Vgs(th)@Id) |
2.2V@60uA |
2V@20uA |
Type |
1PCSNChannel |
1PCSPChannel |
Input Capacitance (Ciss@Vds) |
8.18nF@25V |
19.1pF@25V |
Total Gate Charge (Qg@Vgs) |
110nC@10V |
1.5nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |