Model Number |
IPB80N06S4L05ATMA2 |
IAUT300N08S5N011ATMA1 |
Model Name |
Infineon Technologies IPB80N06S4L05ATMA2 |
Infineon Technologies IAUT300N08S5N011ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
60V 80A 5.1mΩ@80A,10V 107W 2.2V@60uA 1PCSNChannel TO-263 MOSFETs ROHS |
80V 410A 1.1mΩ@100A,10V 375W 3.8V@275uA 1PCSNChannel HSOF-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263 |
HSOF-8 |
Package / Arrange |
Bag-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
60V |
80V |
Continuous Drain Current (Id) |
80A |
410A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
5.1mΩ@80A,10V |
1.1mΩ@100A,10V |
Power Dissipation (Pd) |
107W |
375W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.2V@60uA |
3.8V@275uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
8.18nF@25V |
16.25nF@40V |
Total Gate Charge (Qg@Vgs) |
110nC@10V |
231nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |