Compare Infineon Technologies – IPB80N06S4L05ATMA2 vs Infineon Technologies – IAUT300N08S5N011ATMA1 Specifications

IPB80N06S4L05ATMA2 IAUT300N08S5N011ATMA1
Model Number
IPB80N06S4L05ATMA2 IAUT300N08S5N011ATMA1
Model Name
Infineon Technologies IPB80N06S4L05ATMA2 Infineon Technologies IAUT300N08S5N011ATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
60V 80A 5.1mΩ@80A,10V 107W 2.2V@60uA 1PCSNChannel TO-263 MOSFETs ROHS 80V 410A 1.1mΩ@100A,10V 375W 3.8V@275uA 1PCSNChannel HSOF-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-263 HSOF-8
Package / Arrange
Bag-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
60V 80V
Continuous Drain Current (Id)
80A 410A
Drain Source On Resistance (RDS(on)@Vgs,Id)
5.1mΩ@80A,10V 1.1mΩ@100A,10V
Power Dissipation (Pd)
107W 375W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@60uA 3.8V@275uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
8.18nF@25V 16.25nF@40V
Total Gate Charge (Qg@Vgs)
110nC@10V 231nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

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