Compare Infineon Technologies – IPD060N03LGATMA1 vs Infineon Technologies – BSC060P03NS3EGATMA1 Specifications

IPD060N03LGATMA1 BSC060P03NS3EGATMA1
Model Number
IPD060N03LGATMA1 BSC060P03NS3EGATMA1
Model Name
Infineon Technologies IPD060N03LGATMA1 Infineon Technologies BSC060P03NS3EGATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS 30V 6mΩ@50A,10V 3.1V@150uA 1PCSPChannel TDSON-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.150 grams / 0.005291 oz
Package / Case
TO-252-3 TDSON-8
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
30V 30V
Continuous Drain Current (Id)
50A 17.7A;100A
Drain Source On Resistance (RDS(on)@Vgs,Id)
6mΩ@30A,10V 6mΩ@50A,10V
Power Dissipation (Pd)
56W 2.5W;83W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@250uA 3.1V@150uA
Type
1PCSNChannel 1PCSPChannel
Input Capacitance (Ciss@Vds)
2.4nF@15V 6.02nF@15V
Total Gate Charge (Qg@Vgs)
23nC@10V 81nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+150℃@(Tj)

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