Model Number |
IPD060N03LGATMA1 |
BSC060P03NS3EGATMA1 |
Model Name |
Infineon Technologies IPD060N03LGATMA1 |
Infineon Technologies BSC060P03NS3EGATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
30V 6mΩ@50A,10V 3.1V@150uA 1PCSPChannel TDSON-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.150 grams / 0.005291 oz |
Package / Case |
TO-252-3 |
TDSON-8 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
30V |
Continuous Drain Current (Id) |
50A |
17.7A;100A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
6mΩ@30A,10V |
6mΩ@50A,10V |
Power Dissipation (Pd) |
56W |
2.5W;83W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.2V@250uA |
3.1V@150uA |
Type |
1PCSNChannel |
1PCSPChannel |
Input Capacitance (Ciss@Vds) |
2.4nF@15V |
6.02nF@15V |
Total Gate Charge (Qg@Vgs) |
23nC@10V |
81nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |