Compare Infineon Technologies – IPD060N03LGATMA1 vs Infineon Technologies – BSC079N10NS G Specifications

IPD060N03LGATMA1 BSC079N10NS G
Model Number
IPD060N03LGATMA1 BSC079N10NS G
Model Name
Infineon Technologies IPD060N03LGATMA1 Infineon Technologies BSC079N10NS G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS 100V 13.4A 7.9mΩ@10V,50A 156W 4V@110uA 1PCSNChannel TDSON-8-EP(5x6) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-252-3 TDSON-8-EP(5x6)
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
30V 100V
Continuous Drain Current (Id)
50A 13.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)
6mΩ@30A,10V 7.9mΩ@10V,50A
Power Dissipation (Pd)
56W 156W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@250uA 4V@110uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
2.4nF@15V N/A
Total Gate Charge (Qg@Vgs)
23nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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