| Model Number |
| IPD060N03LGATMA1 |
BSP149H6327 |
| Model Name |
| Infineon Technologies IPD060N03LGATMA1 |
Infineon Technologies BSP149H6327 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
200V 660mA 1.8W 1.8Ω@10V,660mA 1V@400uA 1PCSNChannel SOT-223-4 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.160 grams / 0.005644 oz |
| Package / Case |
| TO-252-3 |
SOT-223-4 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
200V |
| Continuous Drain Current (Id) |
| 50A |
660mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 6mΩ@30A,10V |
1.8Ω@10V,660mA |
| Power Dissipation (Pd) |
| 56W |
1.8W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2.2V@250uA |
1V@400uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 2.4nF@15V |
N/A |
| Total Gate Charge (Qg@Vgs) |
| 23nC@10V |
N/A |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
N/A |
