Compare Infineon Technologies – IPD060N03LGATMA1 vs Infineon Technologies – BSZ900N20NS3GATMA1 Specifications

IPD060N03LGATMA1 BSZ900N20NS3GATMA1
Model Number
IPD060N03LGATMA1 BSZ900N20NS3GATMA1
Model Name
Infineon Technologies IPD060N03LGATMA1 Infineon Technologies BSZ900N20NS3GATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS 200V 15.2A 62.5W 90mΩ@7.6A,10V 4V@30uA 1PCSNChannel TSDSON-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.579 grams / 0.020424 oz
Package / Case
TO-252-3 TSDSON-8
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
30V 200V
Continuous Drain Current (Id)
50A 15.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)
6mΩ@30A,10V 90mΩ@7.6A,10V
Power Dissipation (Pd)
56W 62.5W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@250uA 4V@30uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
2.4nF@15V 920pF@100V
Total Gate Charge (Qg@Vgs)
23nC@10V 11.6nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+150℃@(Tj)

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