Model Number |
IPD060N03LGATMA1 |
BUZ111S |
Model Name |
Infineon Technologies IPD060N03LGATMA1 |
Infineon Technologies BUZ111S |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
55V 80A 8mΩ@80A,10V 300W 4V@240uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-252-3 |
TO-220-3 |
Package / Arrange |
Tape & Reel (TR) |
Bag-packed |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
55V |
Continuous Drain Current (Id) |
50A |
80A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
6mΩ@30A,10V |
8mΩ@80A,10V |
Power Dissipation (Pd) |
56W |
300W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.2V@250uA |
4V@240uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2.4nF@15V |
4.5nF@25V |
Total Gate Charge (Qg@Vgs) |
23nC@10V |
185nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |