Model Number |
IPD060N03LGATMA1 |
IPB054N06N3 G |
Model Name |
Infineon Technologies IPD060N03LGATMA1 |
Infineon Technologies IPB054N06N3 G |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
60V 80A 5.7mΩ@10V,80A 115W 4V@58uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.927 grams / 0.067973 oz |
Package / Case |
TO-252-3 |
TO-263-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
60V |
Continuous Drain Current (Id) |
50A |
80A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
6mΩ@30A,10V |
5.7mΩ@10V,80A |
Power Dissipation (Pd) |
56W |
115W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.2V@250uA |
4V@58uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2.4nF@15V |
N/A |
Total Gate Charge (Qg@Vgs) |
23nC@10V |
N/A |
Operating Temperature |
-55℃~+175℃@(Tj) |
N/A |