Model Number |
IPD060N03LGATMA1 |
IPD65R660CFDA |
Model Name |
Infineon Technologies IPD060N03LGATMA1 |
Infineon Technologies IPD65R660CFDA |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
650V 6A 594mΩ@10V,3.2A 62.5W 4V@200uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.370 grams / 0.013051 oz |
Package / Case |
TO-252-3 |
TO-252-2 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
650V |
Continuous Drain Current (Id) |
50A |
6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
6mΩ@30A,10V |
594mΩ@10V,3.2A |
Power Dissipation (Pd) |
56W |
62.5W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.2V@250uA |
4V@200uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2.4nF@15V |
543pF@100V |
Total Gate Charge (Qg@Vgs) |
23nC@10V |
20nC@0~10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-40℃~+150℃@(Tj) |