| Model Number |
| IPD060N03LGATMA1 |
IPI076N12N3 G |
| Model Name |
| Infineon Technologies IPD060N03LGATMA1 |
Infineon Technologies IPI076N12N3 G |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
120V 100A 6.5mΩ@10V,100A 188W 3V@130uA 1PCSNChannel TO-262-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-252-3 |
TO-262-3 |
| Package / Arrange |
| Tape & Reel (TR) |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
- |
| Drain Source Voltage (Vdss) |
| 30V |
120V |
| Continuous Drain Current (Id) |
| 50A |
100A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 6mΩ@30A,10V |
6.5mΩ@10V,100A |
| Power Dissipation (Pd) |
| 56W |
188W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2.2V@250uA |
3V@130uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 2.4nF@15V |
4.99nF@60V |
| Total Gate Charge (Qg@Vgs) |
| 23nC@10V |
76nC@0~10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |
