Compare Infineon Technologies – IPD060N03LGATMA1 vs Infineon Technologies – IPZ40N04S5L4R8ATMA1 Specifications

IPD060N03LGATMA1 IPZ40N04S5L4R8ATMA1
Model Number
IPD060N03LGATMA1 IPZ40N04S5L4R8ATMA1
Model Name
Infineon Technologies IPD060N03LGATMA1 Infineon Technologies IPZ40N04S5L4R8ATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS 40V 40A 4.8mΩ@20A,10V 48W 2V@17uA 1PCSNChannel TSDSON-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.158 grams / 0.005573 oz
Package / Case
TO-252-3 TSDSON-8
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
30V 40V
Continuous Drain Current (Id)
50A 40A
Drain Source On Resistance (RDS(on)@Vgs,Id)
6mΩ@30A,10V 4.8mΩ@20A,10V
Power Dissipation (Pd)
56W 48W
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@250uA 2V@17uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
2.4nF@15V 1.56nF@25V
Total Gate Charge (Qg@Vgs)
23nC@10V 29nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

Compare Infineon Technologies - IPD060N03LGATMA1 With Other 200 Models

Scroll to Top