Model Number |
IPD50N04S408ATMA1 |
BSC100N06LS3G |
Model Name |
Infineon Technologies IPD50N04S408ATMA1 |
Infineon Technologies BSC100N06LS3G |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS |
60V 12A 2.5W 10mΩ@10V,50A 2.2V@23uA 1PCSNChannel PDFN-8(5.2x6.2) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.600 grams / 0.021164 oz |
0.400 grams / 0.01411 oz |
Package / Case |
TO-252-3-313 |
PDFN-8(5.2x6.2) |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
40V |
60V |
Continuous Drain Current (Id) |
50A |
12A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
7.9mΩ@50A,10V |
10mΩ@10V,50A |
Power Dissipation (Pd) |
46W |
2.5W |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@17uA |
2.2V@23uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
1.78nF@6V |
N/A |
Total Gate Charge (Qg@Vgs) |
22.4nC@10V |
N/A |
Operating Temperature |
-55℃~+175℃@(Tj) |
N/A |