| Model Number |
| IPD50N04S408ATMA1 |
BSP716N H6327 |
| Model Name |
| Infineon Technologies IPD50N04S408ATMA1 |
Infineon Technologies BSP716N H6327 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS |
SOT-223-4 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.600 grams / 0.021164 oz |
0.400 grams / 0.01411 oz |
| Package / Case |
| TO-252-3-313 |
SOT-223-4 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 40V |
- |
| Continuous Drain Current (Id) |
| 50A |
- |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 7.9mΩ@50A,10V |
- |
| Power Dissipation (Pd) |
| 46W |
- |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@17uA |
- |
| Type |
| 1PCSNChannel |
- |
| Input Capacitance (Ciss@Vds) |
| 1.78nF@6V |
- |
| Total Gate Charge (Qg@Vgs) |
| 22.4nC@10V |
- |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
N/A |
