Compare Infineon Technologies – IPD50N04S408ATMA1 vs Infineon Technologies – BSZ520N15NS3 G Specifications

IPD50N04S408ATMA1 BSZ520N15NS3 G
Model Number
IPD50N04S408ATMA1 BSZ520N15NS3 G
Model Name
Infineon Technologies IPD50N04S408ATMA1 Infineon Technologies BSZ520N15NS3 G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS 150V 21A 52mΩ@10V,18A 57W 4V@35uA 1PCSNChannel TSDSON-8(3.3x3.3) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.600 grams / 0.021164 oz 0.122 grams / 0.004303 oz
Package / Case
TO-252-3-313 TSDSON-8(3.3x3.3)
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
40V 150V
Continuous Drain Current (Id)
50A 21A
Drain Source On Resistance (RDS(on)@Vgs,Id)
7.9mΩ@50A,10V 52mΩ@10V,18A
Power Dissipation (Pd)
46W 57W
Gate Threshold Voltage (Vgs(th)@Id)
4V@17uA 4V@35uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
1.78nF@6V N/A
Total Gate Charge (Qg@Vgs)
22.4nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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