Model Number |
IPD50N04S408ATMA1 |
BTS282ZE3180AATMA2 |
Model Name |
Infineon Technologies IPD50N04S408ATMA1 |
Infineon Technologies BTS282ZE3180AATMA2 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS |
49V 80A 6.5mΩ@36A,10V 300W 2V@240uA 1PCSNChannel TO-263-7-1 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.600 grams / 0.021164 oz |
1.650 grams / 0.058202 oz |
Package / Case |
TO-252-3-313 |
TO-263-7-1 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
40V |
49V |
Continuous Drain Current (Id) |
50A |
80A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
7.9mΩ@50A,10V |
6.5mΩ@36A,10V |
Power Dissipation (Pd) |
46W |
300W |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@17uA |
2V@240uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
1.78nF@6V |
4.8nF@25V |
Total Gate Charge (Qg@Vgs) |
22.4nC@10V |
232nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-40℃~+175℃@(Tj) |