Compare Infineon Technologies – IPD50N04S408ATMA1 vs Infineon Technologies – IPAN60R650CEXKSA1 Specifications

IPD50N04S408ATMA1 IPAN60R650CEXKSA1
Model Number
IPD50N04S408ATMA1 IPAN60R650CEXKSA1
Model Name
Infineon Technologies IPD50N04S408ATMA1 Infineon Technologies IPAN60R650CEXKSA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS 600V 9.9A 650mΩ@2.4A,10V 28W 3.5V@200uA 1PCSNChannel TO-220-FP MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.600 grams / 0.021164 oz 1.000 grams / 0.035274 oz
Package / Case
TO-252-3-313 TO-220-FP
Package / Arrange
Tape & Reel (TR) Tube-packed
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
40V 600V
Continuous Drain Current (Id)
50A 9.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)
7.9mΩ@50A,10V 650mΩ@2.4A,10V
Power Dissipation (Pd)
46W 28W
Gate Threshold Voltage (Vgs(th)@Id)
4V@17uA 3.5V@200uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
1.78nF@6V 440pF@100V
Total Gate Charge (Qg@Vgs)
22.4nC@10V 20.5nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -40℃~+150℃@(Tj)

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